IR WORLD HEADQUARTERSKansas St., El Segundo, California, USA Tel: () TAC Fax: () Datasheet. IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power ˇˆ˙˝˝ E C G n-channel TOAC Features UltraFast: Optimized for high operating frequencies kHz in hard switching, > kHz in resonant mode Data and specifications subject to change without notice. The company was founded in and was headquartered in El Segundo, California. IR WORLD HEADQUARTERSKansas St., El Segundo, California, USA Tel: () Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) —IC =A Qge GateEmitter Charge (turn-on) —nC IRG4PC40UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features E G n-channel C VCES = V VCE(on) typ. G4PC40UD Datasheet (PDF) PDIRG4PC40UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies kHz in hard switching, > kHz in resonant mode GenerationIGBT design provides tighter parameter distribution and higher efficiency than = V @VGE =V, IC =A Parameter Min. Typ. Max. Units International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. Find Electronic Component · Fast Delivery · New and Original · Certified Suppliers IRG4PC40UD Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on)IC =A Qge GateEmitter Charge (turn-on)nC VCC = V See ˇˆ˙˝˝ E C G n-channel TOAC Features UltraFast: Optimized for high operating frequencies kHz in hard switching, > kHz in resonant mode Data and specifications subject to change without notice.
IR WORLD HEADQUARTERSKansas St., El Segundo, California, USA Tel: () TAC Fax: () Datasheet. IR provided a wide range of products including power management ICs, power MOSFETs, IGBTs, and other power ˇˆ˙˝˝ E C G n-channel TOAC Features UltraFast: Optimized for high operating frequencies kHz in hard switching, > kHz in resonant mode Data and specifications subject to change without notice. The company was founded in and was headquartered in El Segundo, California. IR WORLD HEADQUARTERSKansas St., El Segundo, California, USA Tel: () Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) —IC =A Qge GateEmitter Charge (turn-on) —nC IRG4PC40UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features E G n-channel C VCES = V VCE(on) typ. G4PC40UD Datasheet (PDF) PDIRG4PC40UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies kHz in hard switching, > kHz in resonant mode GenerationIGBT design provides tighter parameter distribution and higher efficiency than = V @VGE =V, IC =A Parameter Min. Typ. Max. Units International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. Find Electronic Component · Fast Delivery · New and Original · Certified Suppliers IRG4PC40UD Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on)IC =A Qge GateEmitter Charge (turn-on)nC VCC = V See ˇˆ˙˝˝ E C G n-channel TOAC Features UltraFast: Optimized for high operating frequencies kHz in hard switching, > kHz in resonant mode Data and specifications subject to change without notice.
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