It uses a Hollow Emitter structure to enhance switching speeds. Typical application (V mains unless otherwise specified) Integrated antisaturation and protection network. The BUL is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. The BUL is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. According to tube impedance. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR, The BUL is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high BUL STMicroelectronics Bipolar TransistorsBJT NPN Hi-Volt Fast Sw datasheet, inventory, & pricingBUL Datasheet (PDF) PCN. PRODUCT CHANGE NOTIFICATION BUL Datasheet by STMicroelectronics. V AC mains Description. It uses a Hollow Emitter structure to enhance switching HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR, The BUL is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high BUL STMicroelectronics Bipolar TransistorsBJT NPN Hi-Volt Fast Sw datasheet, inventory, & pricing View BUL by STMicroelectronics datasheet for technical specifications, dimensions and more at DigiKey View datasheets for BUL by STMicroelectronics and other related components hereBUL Product details. Download PDF Datasheet Feedback/Errors BUL HIGH VOL TAG E FAST-SWIT CHIN G. NP N POWER T RAN SIST OR V AC mains.
It uses a Hollow Emitter structure to enhance switching speeds. Typical application (V mains unless otherwise specified) Integrated antisaturation and protection network. The BUL is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. The BUL is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. According to tube impedance. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR, The BUL is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high BUL STMicroelectronics Bipolar TransistorsBJT NPN Hi-Volt Fast Sw datasheet, inventory, & pricingBUL Datasheet (PDF) PCN. PRODUCT CHANGE NOTIFICATION BUL Datasheet by STMicroelectronics. V AC mains Description. It uses a Hollow Emitter structure to enhance switching HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR, The BUL is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high BUL STMicroelectronics Bipolar TransistorsBJT NPN Hi-Volt Fast Sw datasheet, inventory, & pricing View BUL by STMicroelectronics datasheet for technical specifications, dimensions and more at DigiKey View datasheets for BUL by STMicroelectronics and other related components hereBUL Product details. Download PDF Datasheet Feedback/Errors BUL HIGH VOL TAG E FAST-SWIT CHIN G. NP N POWER T RAN SIST OR V AC mains.
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