Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an Dual N-Channel Missing: pdf This datasheet has been download from: Datasheets for electronics components IRF International Rectifier HEXFET Power MOSFET. Benefits. RoHS Compliant. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an MOSFET (Si/SiC) N-Channel Power MOSFET. Fast Switching. Description. IRF IRF OverviewV Dual N-Channel HEXFET Power MOSFET in a SOpackage. RoHS Compliant IRF ameter Max. Units VDS Drain Source VoltageV ID @ TC =°C Continuous Drain Current, VGS @V ID @ TC =°C Continuous Drain Current, VGS @V A IDM Pulsed Drain Current †PD @TC =°C Power Dissipation PD @TC =°C Power Dissipation Linear Derating Factor W/°C VGS Gate-to F Product details. Low RDS (on) Dynamic dv/dt Rating. Description. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area The °C rating for the SOpackage provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety OverviewV Dual N-Channel HEXFET Power MOSFET in a SOpackage. Title MOSFET, DUAL N-CH,V, A, SOICDescriptionDatasheet IRF DatasheetKBKansas St., El Segundo, California, USA Tel: () TAC Fax: () Visit us at for sales contact information/04 IRF Product details. Benefits. Description.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an Dual N-Channel Missing: pdf This datasheet has been download from: Datasheets for electronics components IRF International Rectifier HEXFET Power MOSFET. Benefits. RoHS Compliant. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an MOSFET (Si/SiC) N-Channel Power MOSFET. Fast Switching. Description. IRF IRF OverviewV Dual N-Channel HEXFET Power MOSFET in a SOpackage. RoHS Compliant IRF ameter Max. Units VDS Drain Source VoltageV ID @ TC =°C Continuous Drain Current, VGS @V ID @ TC =°C Continuous Drain Current, VGS @V A IDM Pulsed Drain Current †PD @TC =°C Power Dissipation PD @TC =°C Power Dissipation Linear Derating Factor W/°C VGS Gate-to F Product details. Low RDS (on) Dynamic dv/dt Rating. Description. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area The °C rating for the SOpackage provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety OverviewV Dual N-Channel HEXFET Power MOSFET in a SOpackage. Title MOSFET, DUAL N-CH,V, A, SOICDescriptionDatasheet IRF DatasheetKBKansas St., El Segundo, California, USA Tel: () TAC Fax: () Visit us at for sales contact information/04 IRF Product details. Benefits. Description.
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