File SizeKbytes. Description: Silicon N Channel IGBT High Speed Power SwitchingResults Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = V typ High speed switching tf = ns typ Low leak current ICES =μA max OutlineGateCollectorEmitterCollector (Flange) C Download RJP30E2 Datasheet. File SizeKbytesRJP30E2 Datasheet (PDF)Renesas Technology Corp: Part Trench gate technology (G5H series) Low collector to emitter saturation voltage. Manufacturer: Renesas Technology Corp. RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE (sat) = Features. File SizeKbytes. Manufacturer: Renesas RJP30E2 Datasheet. Low leak current ICES =μA RJP30ERJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features Trench gate technology (G5H series) Low collector to emitter saturati Manufacturer: Renesas Technology Corp Download RJP30E2 Datasheet. BuyNow BuyNow (Manufacturer a Rochester Electronics LLC) Part: RJP30EDescription: Silicon N Channel IGBT High Speed Power Switching. Part: RJP30EDatasheet: Kb/7P. Manufacturer: Renesas RJP30E2 datasheet pdf (KB) Distributor DigiKey: StockIn Stock: PriceunitsUSD. High speed switching tf = ns typ VCE(sat) = V typ. Part: RJP30EDescription: Silicon N Channel IGBT High Speed Power Switching. Part: RJP30EDescription: Silicon N Channel IGBT High Speed Power Switching.
File SizeKbytes. Description: Silicon N Channel IGBT High Speed Power SwitchingResults Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = V typ High speed switching tf = ns typ Low leak current ICES =μA max OutlineGateCollectorEmitterCollector (Flange) C Download RJP30E2 Datasheet. File SizeKbytesRJP30E2 Datasheet (PDF)Renesas Technology Corp: Part Trench gate technology (G5H series) Low collector to emitter saturation voltage. Manufacturer: Renesas Technology Corp. RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE (sat) = Features. File SizeKbytes. Manufacturer: Renesas RJP30E2 Datasheet. Low leak current ICES =μA RJP30ERJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features Trench gate technology (G5H series) Low collector to emitter saturati Manufacturer: Renesas Technology Corp Download RJP30E2 Datasheet. BuyNow BuyNow (Manufacturer a Rochester Electronics LLC) Part: RJP30EDescription: Silicon N Channel IGBT High Speed Power Switching. Part: RJP30EDatasheet: Kb/7P. Manufacturer: Renesas RJP30E2 datasheet pdf (KB) Distributor DigiKey: StockIn Stock: PriceunitsUSD. High speed switching tf = ns typ VCE(sat) = V typ. Part: RJP30EDescription: Silicon N Channel IGBT High Speed Power Switching. Part: RJP30EDescription: Silicon N Channel IGBT High Speed Power Switching.
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