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<p>Benefits. High frequency DC-DC converters. Switched mode power supplies DC to DC converters IRFRN, IRFUN Datasheet by Infineon Technologies. IRFRN. Low Gate to Drain Charge to  FRN Datasheet. N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™1technology. Switching Losses Part: IIRFRN. HEXFET® Power MOSFET. N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™1technology. International IGER Rectiﬁer f. Benefits. Data and specifications subject to change without notice/ Note: For the most current drawings please refer to the IR site at IRFRN. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered devices Description. Description: N-Channel MOSFET Transistor Description. V Single N-Channel IR MOSFET in a D-Pak package. Overview. Applications. PDIRFRN IRFUN. Product availability: IRFR in SOT (D-PAK)When mounted on 1 square PCB (FRor G Material). l High frequency DC-DC converters. Product availability: IRFR in SOT (D-PAK)Features. Applications. * For recommended footprint and soldering techniques refer to application noteAN IR WORLD  IRFRN. When mounted on 1 square PCB (FRor G Material). IRFRN. Overview. Datasheet: Kb/2P. IRFUN. Manufacturer: Inchange Semiconductor Company Limited. Download PDF Datasheet Feedback/Errors. l Low Gate to Drain Charge to Reduce. V Single N-Channel IR MOSFET in a D-Pak g: pdf SMPS MOSFET. * For recommended footprint and soldering techniques refer to application noteAN IR WORLD HEADQUARTERSKansas St., El Segundo, California, USA Tel: () TAC Fax: () Visit us at for sales contact information IR WORLD HEADQUARTERSKansas St., El Segundo, California, USA Tel: () TAC Fax: () Visit us at for sales contact information. Fast switching Low on-state resistance Surface mount packageApplications. SMPS MOSFET HEXFET® Power MOSFET.</p></translate>
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