Voir la source de Irf540 mosfet datasheet pdf

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</center><p>This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer IRFNA, V, Ohm, N-Channel, Power MOSFET Packaging Symbol Features. This Datasheet: Description: STMicroelectronics: IRFKb 6P: NCHANNELVohmATO/TOFI POWER MOSFET SHENZHEN DOINGTER SEMIC IRF 1Mb 5P: N-Channel MOSFET uses advanced trench technology Fairchild Semiconductor: IRF Kb 5P: N-Channel Power MOSFETs,A, V List of Unclassifed Man IRF 2Mb © Fairchild Semiconductor Corporation IRFN Rev. C IRFNA, V, Ohm, N-Channel, Power MOSFET Packaging Symbol Features Ultra Low On-Resistance IRF Product details. Ultra Low On-Resistance -r. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient IRFN Product details. This  View IRF by Vishay Siliconix datasheet for technical specifications, dimensions and more at DigiKey Advanced HEXFETﬁ Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenessDynamic dv/dt RatingRepetitive Avalanche RatedFast Switching Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Description. DS(ON) = Ω HEXFET® Power MOSFET VDSS = V RDS(on) = mΩ ID =A This HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on  Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.</p></translate>
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